The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

May. 23, 2014
Applicant:

Newsouth Innovations Pty Limited, UNSW Sydney, AU;

Inventors:

Valantis Vais, Beverly Park, AU;

Alison Joan Lennon, Rozelle, AU;

Stuart Ross Wenham, Cronulla, AU;

Jing Jia Ji, Shanghai, CN;

Alison Maree Wenham, Cronulla, AU;

Jingnan Tong, Maroubra, AU;

Xi Wang, Kingsford, AU;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 21/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02167 (2013.01); H01L 21/02258 (2013.01); H01L 31/022425 (2013.01); H01L 31/022458 (2013.01); H01L 31/1868 (2013.01); Y02E 10/50 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing the exposed surface of the semiconductor device in an electrolyte; producing an electric field in the semiconductor device such that the p-n junction is forward-biased and the exposed surface is anodic; and electrochemically oxidizing the exposed surface to form an oxide layer.


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