The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Mar. 10, 2014
Applied Materials, Inc., Santa Clara, CA (US);
Kurtis Leschkies, Santa Clara, CA (US);
Steven Verhaverbeke, San Francisco, CA (US);
Robert Visser, Menlo Park, CA (US);
John M. White, Hayward, CA (US);
Yan Ye, Saratoga, CA (US);
Dong-Kil Yim, Santa Maria, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
The present invention generally relates to a thin film semiconductor device having a buffer layer formed between the semiconductor layer and one or more layers. In one embodiment, a thin film semiconductor device includes a semiconductor layer having a first work function and a first electron affinity level, a buffer layer having a second work function greater than the first work function and a second electron affinity level that is less than the first electron affinity level; and a gate dielectric layer having a third work function less than the second work function and a third electron affinity level that is greater than the second electron affinity level.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile