The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Mar. 02, 2012
Applicants:
Young-ki Hong, Anyang-si, KR;
Jae-woo Chung, Yongin-si, KR;
Seung-ho Lee, Suwon-si, KR;
Joong-hyuk Kim, Seoul, KR;
Inventors:
Young-ki Hong, Anyang-si, KR;
Jae-woo Chung, Yongin-si, KR;
Seung-ho Lee, Suwon-si, KR;
Joong-hyuk Kim, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/28 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1292 (2013.01); H01L 27/124 (2013.01); H01L 27/283 (2013.01); H01L 29/41733 (2013.01); H01L 29/7835 (2013.01); H01L 29/7869 (2013.01); H01L 29/78645 (2013.01);
Abstract
Thin film transistors (TFT) and methods of manufacturing the same. A TFT includes a line-shaped gate of uniform thickness. A cross-section of the gate is curved where a side surface and a top surface meet. The gate includes one, or two or more gate lines.