The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Jul. 22, 2014
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Tokyo, JP;
Daisuke Kawae, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×10/cm, the work function φms of a source electrode in contact with the oxide semiconductor, the work function φmd of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy φms≦χ<φmd. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved.