The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Mar. 05, 2014
Applicant:

Thomas J. Knight, Silver Springs, MD (US);

Inventor:

Thomas J. Knight, Silver Springs, MD (US);

Assignee:

Northrop Grumman Systems Corporation, Falls Church, VA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/482 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4821 (2013.01); H01L 21/764 (2013.01); H01L 21/7688 (2013.01); H01L 21/76883 (2013.01); H01L 23/481 (2013.01); H01L 23/5222 (2013.01); H01L 23/53295 (2013.01);
Abstract

A method is provided of forming an interconnect structure. The method comprises forming a first dielectric layer overlying a first conductive layer, etching a trench opening in the first dielectric layer, depositing a sacrificial material layer in the trench opening, and forming a second conductive layer overlying the sacrificial layer. The method also comprises forming a via to the sacrificial layer, and performing an etch to remove the sacrificial material layer through the via and leave a resultant air gap between the first conductive layer and the second conductive layer decreasing the effective dielectric constant between the first and second conductive layers.


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