The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Feb. 01, 2016
Applicant:

Hitachi-kokusai Electric Inc., Tokyo, JP;

Inventors:

Yushin Takasawa, Yoyama, JP;

Hajime Karasawa, Toyama, JP;

Yoshiro Hirose, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/318 (2006.01); H01L 21/314 (2006.01); H01L 21/67 (2006.01); C23C 16/50 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); C23C 16/46 (2006.01); C23C 16/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67109 (2013.01); C23C 16/0209 (2013.01); C23C 16/45527 (2013.01); C23C 16/45531 (2013.01); C23C 16/45542 (2013.01); C23C 16/45544 (2013.01); C23C 16/45546 (2013.01); C23C 16/45557 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01L 21/022 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02112 (2013.01); H01L 21/02126 (2013.01); H01L 21/02145 (2013.01); H01L 21/02153 (2013.01); H01L 21/02161 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02175 (2013.01); H01L 21/02178 (2013.01); H01L 21/02186 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/02321 (2013.01); H01L 21/02332 (2013.01); H01L 21/318 (2013.01); H01L 21/3141 (2013.01); H01L 21/3185 (2013.01);
Abstract

Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: (a) forming a discontinuous first layer including the first element and having a thickness of less than one atomic layer on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate; and (b) forming a second layer including the first element and the second element by supplying a gas containing the second element into the process vessel to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.


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