The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Jul. 11, 2012
Applicants:

Mamoru Terai, Chiyoda-ku, JP;

Shiori Idaka, Chiyoda-ku, JP;

Yoshiyuki Nakaki, Chiyoda-ku, JP;

Yoshiyuki Suehiro, Chiyoda-ku, JP;

Inventors:

Mamoru Terai, Chiyoda-ku, JP;

Shiori Idaka, Chiyoda-ku, JP;

Yoshiyuki Nakaki, Chiyoda-ku, JP;

Yoshiyuki Suehiro, Chiyoda-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 29/417 (2006.01); H01L 21/78 (2006.01); H01L 23/433 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 21/56 (2013.01); H01L 21/78 (2013.01); H01L 23/31 (2013.01); H01L 23/3107 (2013.01); H01L 23/3135 (2013.01); H01L 23/4334 (2013.01); H01L 23/49503 (2013.01); H01L 23/49548 (2013.01); H01L 23/49568 (2013.01); H01L 23/562 (2013.01); H01L 24/36 (2013.01); H01L 24/40 (2013.01); H01L 29/417 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/40137 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/351 (2013.01);
Abstract

A plurality of semiconductor elements for power control are formed on a semiconductor substrate. A stress relaxation resin layer covering a crossing region where band-shaped dicing areas dividing the semiconductor elements adjacent to each other cross is formed. The crossing region is diced to cut the stress relaxation resin layer to obtain the separate semiconductor elements. Accordingly, even with semiconductor elements produced with a compound semiconductor substrate of SiC or the like, a semiconductor device having high adhesive strength with a sealing resin and being less likely to cause cracking or peeling of the sealing resin due to thermal stress during an operation can be obtained.


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