The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Jan. 14, 2015
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); B82Y 10/00 (2011.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/02603 (2013.01); B82Y 10/00 (2013.01); H01L 21/0262 (2013.01); H01L 21/02667 (2013.01); H01L 29/068 (2013.01); H01L 29/0669 (2013.01); H01L 29/0673 (2013.01); H01L 29/1054 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66469 (2013.01); H01L 29/775 (2013.01); H01L 29/78687 (2013.01); H01L 29/78696 (2013.01); B82Y 40/00 (2013.01);
Abstract
A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.