The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Apr. 06, 2015
Applicant:

Hitachi-kokusai Electric Inc., Tokyo, JP;

Inventors:

Yushin Takasawa, Toyama, JP;

Hajime Karasawa, Toyama, JP;

Yoshiro Hirose, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/455 (2006.01); H01L 21/314 (2006.01); H01L 21/318 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01); C23C 16/50 (2006.01); C23C 14/54 (2006.01); C23C 28/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 14/542 (2013.01); C23C 16/45527 (2013.01); C23C 16/45531 (2013.01); C23C 16/45542 (2013.01); C23C 16/45544 (2013.01); C23C 16/45546 (2013.01); C23C 16/45557 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); C23C 28/36 (2013.01); H01L 21/022 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02112 (2013.01); H01L 21/02126 (2013.01); H01L 21/02145 (2013.01); H01L 21/02153 (2013.01); H01L 21/02161 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02175 (2013.01); H01L 21/02178 (2013.01); H01L 21/02186 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/02321 (2013.01); H01L 21/02326 (2013.01); H01L 21/02332 (2013.01); H01L 21/318 (2013.01); H01L 21/3141 (2013.01); H01L 21/3185 (2013.01);
Abstract

Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element under a condition where chemical adsorption of a molecule constituting the gas containing the first element is not saturated; forming a second layer including the first layer and a layer including a second element stacked on the first layer by supplying a gas containing the second element under a condition where chemical adsorption of a molecule constituting the gas containing the second element is not saturated; and forming a third layer by supplying a gas containing a third element to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.


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