The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Apr. 06, 2015
Applicant:

Hitachi-kokusai Electric Inc., Tokyo, JP;

Inventors:

Yushin Takasawa, Toyama, JP;

Hajime Karasawa, Toyama, JP;

Yoshiro Hirose, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/455 (2006.01); H01L 21/314 (2006.01); H01L 21/318 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01); C23C 16/50 (2006.01); C23C 14/54 (2006.01); C23C 28/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 14/542 (2013.01); C23C 16/45527 (2013.01); C23C 16/45531 (2013.01); C23C 16/45542 (2013.01); C23C 16/45544 (2013.01); C23C 16/45546 (2013.01); C23C 16/45557 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); C23C 28/36 (2013.01); H01L 21/022 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02112 (2013.01); H01L 21/02126 (2013.01); H01L 21/02145 (2013.01); H01L 21/02153 (2013.01); H01L 21/02161 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02175 (2013.01); H01L 21/02178 (2013.01); H01L 21/02186 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/02321 (2013.01); H01L 21/02326 (2013.01); H01L 21/02332 (2013.01); H01L 21/318 (2013.01); H01L 21/3141 (2013.01); H01L 21/3185 (2013.01);
Abstract

Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; forming a third layer including the second layer and a discontinuous layer including a third element stacked on the second layer; and forming a fourth layer including the first element, the second element, the third element and a fourth element by supplying a gas containing the fourth element to the substrate to modify the third layer.


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