The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Nov. 13, 2014
Applicant:
Japan Display Inc., Minato-ku, JP;
Inventors:
Assignee:
Japan Display Inc., Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02238 (2013.01); H01L 21/02052 (2013.01); H01L 21/02323 (2013.01); H01L 21/02343 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 21/02686 (2013.01); H01L 21/02691 (2013.01); H01L 21/02667 (2013.01); H01L 27/1274 (2013.01);
Abstract
According to one embodiment, provided is a polycrystallization method for polycrystallizing an amorphous semiconductor film that has a natural oxide film on the surface. The polycrystallization method includes a step of cleaning the natural oxide film while leaving the natural oxide film on the surface of the amorphous semiconductor film, and a step of polycrystallizing the amorphous semiconductor film in the state where the natural oxide film is left.