The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
May. 14, 2014
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Brandon Kwon, Cheongju-si, KR;
Jung Hoon Sul, Cheongju-si, KR;
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Abstract
A Complementary Metal-Oxide-Semiconductor (CMOS) analog switch has a circuit structure such that when a supply voltage is applied, the CMOS analog switch biases voltages at both ends of a Metal-Oxide-Semiconductor Field Effect Transistor (MOS) device, which switches on upon application of supply voltage, to a substrate node of MOS, or biases the substrate voltage of MOS device to a ground voltage state during a switching-off operation. The substrate voltage of MOS device in floating state is still biased to the ground voltage state even when abnormal, high voltages are applied to both ends of the MOS device. As a result, threshold voltage and conduction resistance decrease compared to related analog switches, and frequency bandwidth increases.