The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Mar. 20, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Hironobu Furuhashi, Mie-ken, JP;

Iwao Kunishima, Mie-ken, JP;

Susumu Shuto, Kanagawa-ken, JP;

Yoshiaki Asao, Kanagawa-ken, JP;

Gaku Sudo, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01); G11C 11/56 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0002 (2013.01); G11C 11/5678 (2013.01); G11C 13/0004 (2013.01); H01L 45/065 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); G11C 2213/71 (2013.01); G11C 2213/72 (2013.01); H01L 27/2409 (2013.01); H01L 27/2481 (2013.01);
Abstract

A memory device includes n (n being an integer of 2 or more) resistance change films being series connected to each other. Each of the resistance change films is a superlattice film in which plural pairs of a first crystal layer made of a first compound and a second crystal layer made of a second compound are alternately stacked. An average composition of the entire resistance change film or an arrangement pitch of the first crystal layers and the second crystal layers are mutually different among the n resistance change films.


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