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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9382641 B1

PDFFull Text
Date of Patent:
Jul. 05, 2016

Filed:

Apr. 26, 2010

Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device

Applicants:

Mikiya Ichimura, Nagoya, JP;

Makoto Miyoshi, Nagoya, JP;

Mitsuhiro Tanaka, Nagoya, JP;

Inventors:

Mikiya Ichimura, Nagoya, JP;

Makoto Miyoshi, Nagoya, JP;

Mitsuhiro Tanaka, Nagoya, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:

Burr & Brown, PLLC

Primary Examiner:

Eugene Lee

Int. Cl.
CPC ...
H01L 29/20 (2006.01); C30B 25/02 (2006.01); C30B 19/00 (2006.01); C30B 23/02 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
C30B 25/02 (2013.01); C30B 19/00 (2013.01); C30B 23/02 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01);
Abstract

An epitaxial substrate having preferable two dimensional electron gas characteristic and contact characteristic is provided in the present invention. A channel layer is formed on a base substrate with GaN. A spacer layer is formed on the channel layer with AlN. A barrier layer is formed on the spacer layer with group III nitride having a composition of InAlGaN (wherein x+y+z=1) and at least including In, Al, and Ga such that the composition of the barrier layer is within the range surrounded with four lines defined in accordance with the composition on a ternary phase diagram with InN, AlN, and GaN as vertexes.

Find Patent Forward Citations

Ichimura, Mikiya. (2016). Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device (U.S. Patent No. 9382641). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9382641

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