The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Oct. 02, 2012
Applicant:

Shin-etsu Quartz Products Co., Ltd., Tokyo, JP;

Inventor:

Shigeru Yamagata, Narashino, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/10 (2006.01); C03C 3/06 (2006.01); C03B 19/09 (2006.01); C03C 17/00 (2006.01); C03C 17/02 (2006.01); C30B 15/02 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/10 (2013.01); C03B 19/095 (2013.01); C03C 3/06 (2013.01); C03C 17/004 (2013.01); C03C 17/02 (2013.01); C03C 2201/30 (2013.01); C03C 2203/10 (2013.01); C30B 15/02 (2013.01); C30B 29/06 (2013.01); Y02P 40/57 (2015.11); Y10T 117/1032 (2015.01);
Abstract

The present invention provides a single-crystal silicon pulling silica container including an outer layer made of opaque silica glass containing gaseous bubbles and an inner layer made of transparent silica glass that does not substantially contain the gaseous bubbles; the container also including: a bottom portion, a curved portion, and a straight body portion, wherein continuous grooves are formed on a surface of the inner layer from at least part of the bottom portion to at least part of the straight body portion through the curved portion. As a result, there are provided the single-crystal silicon pulling silica container that can reduce defects called voids or pinholes in the pulled single-crystal silicon and a method for manufacturing such a silica container.


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