The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Aug. 23, 2012
Kenta Masuda, Chiba, JP;
Kouki Ichitsubo, Chiba, JP;
Kohei Kawano, Chiba, JP;
Masakazu Suzuki, Chiba, JP;
Jun Kumasaka, Chiba, JP;
Hideaki Tanaka, Kagoshima, JP;
Kenta Masuda, Chiba, JP;
Kouki Ichitsubo, Chiba, JP;
Kohei Kawano, Chiba, JP;
Masakazu Suzuki, Chiba, JP;
Jun Kumasaka, Chiba, JP;
Hideaki Tanaka, Kagoshima, JP;
TAIHEIYO CEMENT CORPORATION, Tokyo, JP;
Abstract
A high-purity silicon carbide powder and its production method enable mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production in an Acheson furnace using a heat generator. The raw material for silicon carbide production is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production contains the siliceous raw material and the carbonaceous raw material at a mixture mole ratio (C/SiO) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.