The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Feb. 19, 2014
Industrial Technology Research Institute, Hsinchu, TW;
Yu Wen Hsu, Tainan, TW;
Shih Ting Lin, Hualien County, TW;
Jen Yi Chen, Hsinchu County, TW;
Chao Ta Huang, Hsinchu, TW;
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu, TW;
Abstract
A method for manufacturing a MEMS device includes the following operations. An SOI wafer including a device layer, an insulating layer and a handle layer is provided. The device layer is etched to form a recess and an annular protrusion surrounding the recess. A moving part and a spring of the MEMS device are formed on the recess by etching the device layer, the insulating layer and the handle layer. An anchor of the MEMS device is formed at the annular protrusion by etching the device layer, the insulating layer and the handle layer. The moving part and the anchor are connected to each other by the spring. The insulating layer is disposed between a first conductive portion and a second conductive portion of the moving part. The insulating layer is disposed between a first conductive portion and a second conductive portion of the anchor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile