The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Mar. 10, 2015
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Sony Corporation, Tokyo, JP;
Yohei Enya, Itami, JP;
Takashi Kyono, Itami, JP;
Masaki Ueno, Itami, JP;
Takao Nakamura, Itami, JP;
Takashi Matsuura, Itami, JP;
Tatsushi Hamaguchi, Kanagawa, JP;
Yuji Furushima, Miyagi, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
A Group III nitride semiconductor device comprises: a Group III nitride semiconductor layer having a primary surface, inclined with respect to a c-plane of the Group III nitride semiconductor at an angle in a range of 50 degrees or more and 80 degrees or less, of a Group III nitride semiconductor; a p-type Group III nitride semiconductor laminate including first to third p-type Group III nitride semiconductor layers, the first to third p-type Group III nitride semiconductor layers being provided on the primary surface of the Group III nitride semiconductor layer, the first and third p-type Group III nitride semiconductor layers sandwiching the second p-type Group III nitride semiconductor layer such that the second p-type Group III nitride semiconductor layer incorporates strain; and an electrode provided on the p-type Group III nitride semiconductor laminate. The electrode is in contact with the first p-type Group III nitride semiconductor layer.