The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9379521 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 28, 2016

Filed:

Jul. 24, 2013
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventor:

Shimpei Takagi, Osaka, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/343 (2006.01); H01S 5/00 (2006.01); H01S 5/02 (2006.01); H01S 5/028 (2006.01); H01S 5/22 (2006.01); H01S 5/32 (2006.01); H01S 5/323 (2006.01); G01N 21/958 (2006.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); G01N 21/958 (2013.01); H01S 5/0014 (2013.01); H01S 5/0202 (2013.01); H01S 5/0206 (2013.01); H01S 5/028 (2013.01); H01S 5/0425 (2013.01); H01S 5/2201 (2013.01); H01S 5/3202 (2013.01); H01S 5/32341 (2013.01);
Abstract

A group III nitride semiconductor laser device comprises a laser structure including a support base of the group III nitride and first and second end facets for a laser cavity, and the first and second end facets intersect with an m-n plane defined by the m-axis of the group III nitride and an axis normal to a semipolar primary surface of the support base. A +c axis vector for a c-axis of the group III nitride forms an angle ALPHA in a range of 71 to 79 degrees with the normal axis. The +c axis vector is inclined at an angle α1 of 10 to 25 degrees with one normal vector defined at one edge of the first end facet, and is inclined at an angle β1 of zero to 5 degrees with another normal vector defined at the other edge of the first end facet.


Find Patent Forward Citations

Takagi, Shimpei. (2016). Group iii nitride semiconductor laser device, method for producing group iii nitride semiconductor laser device, method for evaluating end facet for optical cavity of group iii nitride semiconductor laser device, and method for evaluating scribe groove (U.S. Patent No. 9379521). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9379521

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