The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Aug. 19, 2013
Osaka University, Suita-shi, Osaka, JP;
Junichi Takeya, Suita, JP;
Takafumi Uemura, Suita, JP;
Osaka University, Osaka, JP;
Abstract
An organic thin film transistor includes an insulating substrate (), gate electrodes (), a gate insulating film (), an organic semiconductor film (), and a source electrode () and a drain electrode (). The gate electrodes include a main gate electrode () that is disposed in a region opposed to a channel region between the source electrode and the drain electrode in the organic semiconductor film, and a pair of auxiliary gate electrodes () that are disposed in respective regions opposed to the source electrode and the drain electrode on the two sides of the main gate electrode. The main gate electrode and the auxiliary gate electrodes are electrically separated from each other. The contact resistance between the source and drain electrodes and the organic semiconductor film is controlled so as to be at a low level even when the organic thin film transistor is driven in a low voltage region, and the operation frequency can be sufficiently enhanced due to the channel length being shortened.
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