The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Feb. 16, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ali Afzali-Ardakani, Ossining, NY (US);

Tze-chiang Chen, Yorktown Heights, NY (US);

Kailash Gopalakrishnan, New York, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Young H. Kwark, Chappaqua, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/36 (2006.01); H01L 51/05 (2006.01); H01L 51/10 (2006.01); H01L 51/00 (2006.01); G11C 11/40 (2006.01); G11C 7/22 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0508 (2013.01); G11C 7/22 (2013.01); G11C 11/40 (2013.01); G11C 11/5664 (2013.01); H01L 51/0098 (2013.01); H01L 51/0562 (2013.01); H01L 51/102 (2013.01); H01L 51/107 (2013.01); H01L 51/0055 (2013.01);
Abstract

An apparatus with a programmable response includes a semiconductor device with a junction formed thereon, the junction having a built-in potential, a quantum well element proximate to the junction that provides an energy well within a depletion region of the junction. The energy well comprises one or more donor energy states that support electron trapping, and/or one or more acceptor energy states that support hole trapping; thereby modulating the built-in potential of the junction. The semiconductor device may be a diode, a bipolar diode, a transistor, or the like. A corresponding method is also disclosed herein.


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