The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Jan. 27, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity type semiconductor. A mask including an etch stop layer is formed on the base layer. A plurality of openings are formed in the mask so as to expose regions of. A plurality of nanocores are formed by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings. The mask is partially removed by using the etch stop layer to expose side portions of the plurality of nanocores. An active layer and a second conductivity type semiconductor layer are sequentially grown on surfaces of the plurality of nanocores.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile