The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Dec. 19, 2014
Canon Anelva Corporation, Kawasaki-shi, JP;
Yoshiaki Daigo, Kawasaki, JP;
CANON ANELVA CORPORATION, Kawasaki-shi, JP;
Abstract
The present invention has an object to provide an epitaxial film forming method of epitaxially growing a high-quality group III nitride semiconductor thin film on an α-AlOsubstrate by a sputtering method. An epitaxial film forming method according to an embodiment of the present invention includes forming an epitaxial film of a group III nitride semiconductor thin film on an α-AlOsubstrate placed on a substrate holder () including a heater electrode () and a bias electrode () in a sputtering apparatus () by applying high-frequency power to a target electrode () and applying high-frequency bias power to the bias electrode () while the heater electrode () maintains the α-AlOsubstrate at a predetermined temperature. In this process, the high-frequency power and the high-frequency bias power are applied so that frequency interference therebetween may not occur.