The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Sep. 20, 2012
Applicant:
Jer-liang Yeh, Taichung, TW;
Inventor:
Jer-Liang Yeh, Taichung, TW;
Assignee:
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 31/0368 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03682 (2013.01); H01L 21/02021 (2013.01); H01L 21/02019 (2013.01); Y02E 10/546 (2013.01);
Abstract
A wafer with high rupture resistance includes a plurality of surfaces, wherein the surfaces include a largest surface having a largest area than others and a side surface connected to the fringe of the largest surface. The side surface forms a nanostructured layer thereon to assist the stress dispersion of the wafer. Accordingly, the wafer is provided with a high rupture resistance so as to prevent the wafer from damages during semiconductor or other processes.