The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Aug. 27, 2015
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Mohit Bajaj, Bangalore, IN;
Suresh Gundapaneni, Andhra Pradesh, IN;
Aniruddha Konar, Bangalore, IN;
Narasimha R. Mavilla, Bangalore, IN;
Kota V. R. M. Murali, Bangalore, IN;
Edward J. Nowak, Essex Junction, VT (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/267 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02532 (2013.01); H01L 21/02565 (2013.01); H01L 29/0847 (2013.01); H01L 29/267 (2013.01); H01L 29/66977 (2013.01); H01L 29/78 (2013.01); H01L 29/785 (2013.01); H01L 29/78681 (2013.01); H01L 29/78693 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VOregion.