The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Jan. 07, 2015
YE Xin Technology Consulting Co., Ltd., Hsinchu, TW;
Kuo-Lung Fang, Hsinchu, TW;
Yi-Chun Kao, Hsinchu, TW;
Po-Li Shih, Hsinchu, TW;
Chih-Lung Lee, Hsinchu, TW;
Hsin-Hua Lin, Hsinchu, TW;
Ye Xin Technology Consulting Co., Ltd., Hsinchu, TW;
Abstract
A method for forming a TFT includes providing a substrate, a gate electrode on the substrate, an electrically insulating layer on the substrate to totally cover the gate electrode, a channel layer on the electrically insulating layer, a first photoresist pattern on the channel layer, a metal layer on the electrically insulating layer, the channel layer and the first photoresist layer, and a second photoresist pattern on the metal layer. A middle portion of the metal layer is then removed to form a source electrode and a drain electrode and to expose the first photoresist pattern and a portion of the channel layer between the first and second photoresist patterns. The exposed portion of the channel layer is then processed to have its electrical conductivity be lowered to thereby reduce a hot-carrier effect of the channel layer.