The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Mar. 19, 2014
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

KwangHwan Ji, Taebaek-si, KR;

DaeHwan Kim, Paju-si, KR;

JunHyeon Bae, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/1225 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01);
Abstract

A thin-film transistor includes a substrate, a first gate electrode formed on the substrate, a first active layer that is formed on the substrate and includes a first oxide semiconductor layer and a first barrier layer, a second active layer that is formed on the first active layer and includes a second oxide semiconductor layer and an intermediate barrier layer, a gate insulating layer that is formed on the second active layer, a second gate electrode that is formed on the gate insulating layer and is electrically connected to the first gate electrode, an interlayer insulating film formed on the second gate electrode, the first active layer and the second active layer, and a source electrode and a drain electrode electrically connected to the first active layer and the second active layer.


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