The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Jun. 28, 2012
Chan-long Shieh, Paradise Valley, AZ (US);
Gang Yu, Santa Barbara, CA (US);
Fatt Foong, Goleta, CA (US);
Tian Xiao, Goleta, CA (US);
Juergen Musolf, Santa Barbara, CA (US);
Chan-Long Shieh, Paradise Valley, AZ (US);
Gang Yu, Santa Barbara, CA (US);
Fatt Foong, Goleta, CA (US);
Tian Xiao, Goleta, CA (US);
Juergen Musolf, Santa Barbara, CA (US);
CBRITE INC., Goleta, CA (US);
Abstract
A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.