The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Feb. 13, 2015
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Inventors:
Tomohiro Tamaki, Kanagawa, JP;
Yoshito Nakazawa, Kanagawa, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 23/00 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 24/05 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0634 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/66727 (2013.01); H01L 29/7816 (2013.01); H01L 23/3107 (2013.01); H01L 23/49562 (2013.01); H01L 24/06 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 29/0638 (2013.01); H01L 29/0878 (2013.01); H01L 29/402 (2013.01); H01L 29/41766 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49111 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15788 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18301 (2013.01); H01L 2924/3025 (2013.01);
Abstract
In a semiconductor power device such as a power MOSFET having a super-junction structure in each of an active cell region and a chip peripheral region, an outer end of a surface region of a second conductivity type coupled to a main junction of the second conductivity type in a surface of a drift region of a first conductivity type and having a concentration lower than that of the main junction is located in a middle region between an outer end of the main junction and an outer end of the super-junction structure in the chip peripheral region.