The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Aug. 29, 2014
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Hiroshi Kono, Himeji Hyogo, JP;
Takao Noda, Himeji Hyogo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes first electrode, second electrode, and third electrodes, first, second, third, fourth, and fifth semiconductor regions. The first semiconductor region is provided between the first and second electrodes. The second semiconductor region is provided between the first semiconductor region and the second electrode. The third semiconductor region is provided between the second semiconductor region and the second electrode. The third semiconductor region has an impurity concentration higher than an impurity concentration of the first semiconductor region. The third electrode contacts the third, second, and first semiconductor regions via an insulating film. The fourth semiconductor region is provided between the first semiconductor region and the second electrode. The fifth semiconductor region is provided between the fourth semiconductor region and the second electrode. The fifth semiconductor region has an impurity concentration higher than the impurity concentration of the first semiconductor region.