The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Feb. 18, 2014
Applicants:
University of North Texas, Denton, TX (US);
Quantum Devices, Llc, Potomac, MD (US);
Inventors:
Jeffry A. Kelber, Plano, TX (US);
Christian Binek, Lincoln, NE (US);
Peter Arnold Bowden, Crete, NE (US);
Kirill Belashchenko, Lincoln, NE (US);
Assignee:
QUANTUM DEVICES, LLC, Rockville, MD (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); G11C 11/56 (2006.01); H01F 10/00 (2006.01); G11C 11/16 (2006.01); B82Y 10/00 (2011.01); H01L 29/16 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); G11C 11/161 (2013.01); G11C 11/5607 (2013.01); H01F 10/002 (2013.01); H01L 29/517 (2013.01); H01L 29/66984 (2013.01); B82Y 10/00 (2013.01); H01F 10/3268 (2013.01); H01L 29/1606 (2013.01);
Abstract
The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS, WS, MoSe, WSeand mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.