The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Jul. 20, 2012
Applicant:
Shuichi Tomabechi, Atsugi, JP;
Inventor:
Shuichi Tomabechi, Atsugi, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/2003 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0259 (2013.01); H01L 21/02381 (2013.01); H01L 21/02667 (2013.01); H01L 29/4236 (2013.01);
Abstract
A semiconductor crystal substrate includes a substrate; and a protection layer formed by applying nitride on a surface of the substrate. The protection layer is in an amorphous state in a peripheral area at an outer peripheral part of the substrate, and the protection layer is crystallized in an internal area of the protection layer that is inside the peripheral area of the protection layer.