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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9379222 B1

PDFFull Text
Date of Patent:
Jun. 28, 2016

Filed:

May. 30, 2014

Method of making a split gate non-volatile memory (nvm) cell

Applicants:

Brian A. Winstead, Bridgetown, CA;

Konstantin V. Loiko, Austin, TX (US);

Inventors:

Brian A. Winstead, Bridgetown, CA;

Konstantin V. Loiko, Austin, TX (US);

Assignee:

Freescale Semiconductor, Inc., Austin, TX (US);

Attorney:
Primary Examiner:

Michael Jung

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/306 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66833 (2013.01); H01L 21/28035 (2013.01); H01L 21/28282 (2013.01); H01L 21/30625 (2013.01); H01L 21/32133 (2013.01); H01L 29/42332 (2013.01); H01L 29/42344 (2013.01); H01L 29/4916 (2013.01); H01L 29/66545 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01); H01L 29/792 (2013.01);
Abstract

Making a non-volatile memory (NVM) structure uses a semiconductor substrate. One embodiment includes forming a select gate structure including a first dummy material on the semiconductor substrate and forming a control gate structure including a second dummy material on the semiconductor substrate, where the first dummy material is different from the second dummy material. The embodiment also includes replacing the first dummy material with metal and replacing the second dummy material with polysilicon.

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Winstead, Brian. (2016). Method of making a split gate non-volatile memory (nvm) cell (U.S. Patent No. 9379222). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9379222

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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