The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Jan. 28, 2015
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Akira Endoh, Machida, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/43 (2006.01); H01L 29/12 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 29/7784 (2013.01); H01L 29/7785 (2013.01); H01L 29/122 (2013.01); H01L 29/207 (2013.01); H01L 29/432 (2013.01);
Abstract
A semiconductor device includes: a semiconductor multi-layer structure which includes at least an electron traveling layer and an electron supply layer on a substrate, wherein the electron supply layer includes a first portion which contains Sb and has at least a portion doped with Te, and a second portion which is located closer to the electron traveling layer side than the first portion and has a lattice constant smaller than that of the first portion.