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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9379195 B1

PDFFull Text
Date of Patent:
Jun. 28, 2016

Filed:

May. 23, 2012

Hemt gan device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same

Applicants:

Sameh G. Khalil, Calabasas, CA (US);

Karim S. Boutros, Moorpark, CA (US);

Keisuke Shinohara, Thousand Oaks, CA (US);

Inventors:

Sameh G. Khalil, Calabasas, CA (US);

Karim S. Boutros, Moorpark, CA (US);

Keisuke Shinohara, Thousand Oaks, CA (US);

Assignee:

HRL Laboratories, LLC, Malibu, CA (US);

Attorney:

Ladas & Parry

Primary Examiner:

Asok K Sarkar

Assistant Examiner:

Dmitriy Yemelyanov

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 29/06 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01);
Abstract

A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying the piezo-electric effect in the barrier layer in a drift region between a gate and a drain. A two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain.

Find Patent Forward Citations

Khalil, Sameh. (2016). Hemt gan device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same (U.S. Patent No. 9379195). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9379195

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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