The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Oct. 25, 2014
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/148 (2006.01); H01L 31/14 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 27/14614 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01);
Abstract
The present invention improves the performance of an image sensor. In a planar view, fluorine is introduced into a part overlapping with a channel region in a gate electrode GEof an amplification transistor and is not introduced into the interior of a semiconductor substrateS. Concretely as shown in FIG., a resist film FRis patterned in the manner of opening the part planarly overlapping with the channel region in the gate electrode GE. Then fluorine is injected into the interior of the gate electrode GEexposed from an opening OPby an ion implantation method using the resist film FRin which the opening OPis formed as a mask.