The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Sep. 13, 2013
Semtech Corporation, Camarillo, CA (US);
Daniel Aebischer, Marin-Epagnier, CH;
Michel Chevroulet, Neuchatel, CH;
Semtech Corporation, Camarillo, CA (US);
Abstract
A charge pump circuit includes a substrate and first well region formed in the substrate. A first transistor includes first and second conduction regions disposed in the first well region. A second well region is formed in the substrate. A third well region is formed within the second well region. A second transistor includes first and second conduction regions disposed in the third well region. The second well region and third well region are coupled to a common terminal. The common terminal receives a local potential and the first well region and second well region are commonly maintained at the local potential. The first transistor and second transistor operate within the charge pump cell. A plurality of charge pump cells can be cascaded together with an output of a first charge pump cell coupled to an input of a second charge pump cell.