The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9379068 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 28, 2016

Filed:

Feb. 19, 2013
Applicant:

Ams Ag, Unterpremstaetten, AT;

Inventor:

Wolfgang Reinprecht, Tobelbad, AT;

Assignee:

AMS AG, Unterpremstaetten, AT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 23/60 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); H01L 29/0603 (2013.01); H01L 29/0847 (2013.01); H01L 29/78 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor substrate () is provided with a source region () and a drain region () of a first type of electrical conductivity arranged at a surface () at a distance from one another, a channel region () of a second type of electrical conductivity, which is opposite to the first type of electrical conductivity, arranged between the source region () and the drain region (), and a gate electrode () arranged above the channel region (). A substrate well () of the first type of electrical conductivity is arranged in the substrate () at a distance from the source region (). The substrate well () is contiguous with the drain region (), and the distance between the source region () and the substrate well () is larger than the distance between the source region () and the drain region ().


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