The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Feb. 28, 2013
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Frank Tim Jones, Gilbert, AZ (US);
Phillip Celaya, Gilbert, AZ (US);
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/29 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49551 (2013.01); H01L 23/295 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 24/49 (2013.01); H01L 23/3107 (2013.01); H01L 24/06 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/73 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48111 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/48624 (2013.01); H01L 2224/48724 (2013.01); H01L 2224/48824 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/06562 (2013.01); H01L 2924/0781 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract
In one embodiment, a semiconductor package includes a first and a second die flag, wherein the first and second die flags are separated by a gap. First and second metal oxide semiconductor field effect transistor (MOSFET) die are on the first and the second die flags, respectively. A power control integrated circuit (IC) is stacked on top of at least one of the first or the second MOSFET die. A mold compound is encapsulating the power control IC, the first and second MOSFET die, and the first and second die flags.