The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Feb. 20, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Takayuki Masunaga, Yokkaichi, JP;

Kazuhiro Ueda, Aisai, JP;

Naotake Watanabe, Mie, JP;

Koji Maruno, Yokkaichi, JP;

Toshihiko Kida, Yokohama, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/473 (2006.01); H01L 21/54 (2006.01); H01L 21/56 (2006.01); H01L 23/28 (2006.01); H01L 23/42 (2006.01); H01L 23/31 (2006.01); H01L 23/373 (2006.01); H01L 23/433 (2006.01); H01L 23/495 (2006.01); H01L 25/065 (2006.01); H01L 23/051 (2006.01);
U.S. Cl.
CPC ...
H01L 23/473 (2013.01); H01L 21/54 (2013.01); H01L 21/565 (2013.01); H01L 23/28 (2013.01); H01L 23/3107 (2013.01); H01L 23/3135 (2013.01); H01L 23/3736 (2013.01); H01L 23/42 (2013.01); H01L 23/4334 (2013.01); H01L 23/49562 (2013.01); H01L 25/065 (2013.01); H01L 23/051 (2013.01); H01L 2924/181 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a first conductor, a second conductor, and an envelope. The first conductor includes a first radiation surface. The second conductor includes a second radiation surface. The envelope includes a first envelope portion which is composed of a first insulative material and is formed such that the first envelope portion seals a semiconductor, and a second envelope portion which is composed of a second insulative material and is formed in contact with the first radiation surface and the second radiation surface.


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