The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Mar. 26, 2015
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Seung-Mi Lee, Gyeonggi-do, KR;
Yun-Hyuck Ji, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/3213 (2006.01); H01L 21/3215 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/3215 (2013.01); H01L 21/32133 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 27/092 (2013.01);
Abstract
A semiconductor device includes a substrate including first and second regions. A first gate stack structure containing a first effective work function adjust species is formed over the first region and a second gate stack structure containing a second effective work function adjust species is formed over the second region. A channel region is formed under the first gate stack structure and contains a threshold voltage adjust species.