The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Feb. 18, 2014
Applicants:

Yonggyu Choi, Seongnam-si, KR;

Dong-hyun Kim, Yongin-si, KR;

Yongchul OH, Suwon-si, KR;

Kichul Nam, Gwacheon-si, KR;

Inventors:

Yonggyu Choi, Seongnam-si, KR;

Dong-hyun Kim, Yongin-si, KR;

Yongchul Oh, Suwon-si, KR;

Kichul Nam, Gwacheon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 23/485 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/764 (2013.01); H01L 21/76831 (2013.01); H01L 21/76897 (2013.01); H01L 27/0207 (2013.01);
Abstract

A semiconductor device includes line patterns disposed on a substrate, the line patterns extending in a first direction and being parallel to one another. The semiconductor device includes conductive patterns spaced apart from each other in the first direction between an adjacent pair of the line patterns. The semiconductor device includes insulating fences electrically isolating the conductive patterns from each other and having chamfered corners. The semiconductor device includes insulating patterns filling gaps between side surfaces of the line patterns and the chamfered corners of the insulating fences.


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