The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Jun. 02, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/3213 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32135 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11543 (2013.01); H01L 29/4234 (2013.01); H01L 29/42324 (2013.01); H01L 29/42332 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/7881 (2013.01); H01L 29/792 (2013.01);
Abstract
A non-volatile memory device comprises a substrate, a control gate electrode on the substrate, and a charge storage region between the control gate electrode and the substrate. A control gate mask pattern is on the control gate electrode, the control gate electrode comprising a control base gate and a control metal gate on the control base gate. A width of the control metal gate is less than a width of the control gate mask pattern. An oxidation-resistant spacer is at sidewalls of the control metal gate positioned between the control gate mask pattern and the control base gate.