The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Aug. 07, 2015
Applicants:

Jinman Han, Seongnam-si, KR;

Sun-il Shim, Seoul, KR;

Donghyuk Chae, Seoul, KR;

Jae-hoon Jang, Seongnam-si, KR;

Youngho Lim, Yongin-si, KR;

Hansoo Kim, Suwon-si, KR;

Jaehun Jeong, Hwaseong-si, KR;

Inventors:

Jinman Han, Seongnam-si, KR;

Sun-Il Shim, Seoul, KR;

Donghyuk Chae, Seoul, KR;

Jae-Hoon Jang, Seongnam-si, KR;

Youngho Lim, Yongin-si, KR;

Hansoo Kim, Suwon-si, KR;

Jaehun Jeong, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/14 (2006.01); G11C 16/16 (2006.01); G11C 16/08 (2006.01); G11C 16/12 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/12 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01); G11C 16/3418 (2013.01); H01L 27/11582 (2013.01); H01L 27/1157 (2013.01);
Abstract

Nonvolatile memory device, operating methods thereof, and memory systems including the same. In the operating method, a ground select line of a first string connected to a bit line may be floated. An erase prohibition voltage may be applied to a ground select line of a second string connected to the bit line. An erase operation voltage may be applied to the first and second strings.


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