The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
May. 28, 2014
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventor:
Frank K. Baker, Jr., Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 14/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0002 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 14/009 (2013.01); G11C 2013/0073 (2013.01);
Abstract
A memory cell includes a first bidirectional resistive memory element (BRME), and a second BRME, a first storage node, and a second storage node. A resistive memory write to the cell includes placing the first BRME and the second BRME in complementary resistive states indicative of the value being written. During a subsequent restoration operation, the value as written in the first BRME and second BRME is written to the first storage node and the second storage node while a wordline connected to the memory cell is deasserted.