The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Sep. 09, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Hyunsu Ju, Hwaseong-si, KR;
Min Kyu Yang, Hwaseong-si, KR;
Eunmi Kim, Hwaseong-si, KR;
Seonggeon Park, Yongin-si, KR;
Ingyu Baek, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0002 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0083 (2013.01); G11C 2213/15 (2013.01); G11C 2213/32 (2013.01); G11C 2213/76 (2013.01);
Abstract
A method of operating a resistive non-volatile memory can be provided by applying a forming voltage across first and second electrodes of a selected memory cell in the variable resistance non-volatile memory device during an operation to the selected memory cell. The forming voltage can be a voltage level that is limited to less than a breakdown voltage of an insulation film included in selected memory cell between a variable resistance film and one of first electrode. Related devices and materials are also disclosed.