The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Jun. 18, 2014
Applicant:

Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;

Inventors:

Mickael Brun, Eybens, FR;

Pierre Labeye, Grenoble, FR;

Sergio Nicoletti, Sinard, FR;

Adonis Bogris, Athenes, GR;

Alexandros Kapsalis, Athenes, GR;

Dimitris Syvridis, Athenes, GR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/10 (2006.01); G02F 1/35 (2006.01); G01N 21/3504 (2014.01); G02B 6/12 (2006.01); G01N 21/77 (2006.01);
U.S. Cl.
CPC ...
G02F 1/3536 (2013.01); G02B 6/102 (2013.01); G01N 21/3504 (2013.01); G01N 21/7703 (2013.01); G02B 2006/12176 (2013.01); G02F 2202/105 (2013.01);
Abstract

A device for non-linear conversion of first infrared signal into a second infrared signal with a wavelength that is less than that of the first infrared signal by means of four-wave mixing, which includes at least one portion of SiGe arranged on at least one first layer of material with a refractive index which is less than that of silicon, a germanium concentration in the portion of SiGe which varies continuously between a first value and a second value which is greater than the first value, in a direction which is approximately perpendicular to a face of the first layer on which the portion of SiGe is arranged, and in which a summital part of the portion of SiGe where the germanium concentration is equal to the second value is in contact with a gas and/or a material with a refractive index which is less than that of the silicon.


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