The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Nov. 16, 2012
Hirokazu Iwata, Miyagi, JP;
Seiji Sarayama, Miyagi, JP;
Minoru Fukuda, Kanagawa, JP;
Tetsuya Takahashi, Osaka, JP;
Akira Takahashi, Kanagawa, JP;
Hirokazu Iwata, Miyagi, JP;
Seiji Sarayama, Miyagi, JP;
Minoru Fukuda, Kanagawa, JP;
Tetsuya Takahashi, Osaka, JP;
Akira Takahashi, Kanagawa, JP;
RICOH COMPANY, LTD., Tokyo, JP;
Abstract
A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal.