The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Nov. 29, 2012
Applicant:
Solaicx, Inc., Santa Clara, CA (US);
Inventor:
Tirumani N. Swaminathan, Creve Coeur, MO (US);
Assignee:
Solaicx, Maryland Heights, MO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/12 (2006.01); C30B 15/00 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/12 (2013.01); C30B 15/002 (2013.01); C30B 29/06 (2013.01); Y10T 117/1052 (2015.01);
Abstract
An apparatus for growing ingots by the Czochralski method includes a growth chamber defining an enclosure configured to circulate a purge gas about the growing ingot and a crucible provided in the growth chamber configured to hold the molten silicon. A weir is supported in the crucible and is configured to separate the molten silicon into an inner growth region surrounding the melt/crystal interface from an outer region configured to receive the crystalline feedstock. The weir comprises at least one sidewall extending vertically and a cap extending substantially perpendicularly to the sidewall.