The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Nov. 08, 2012
Applicant:

Shin-etsu Quartz Products Co., Ltd., Tokyo, JP;

Inventor:

Shigeru Yamagata, Narashino, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/10 (2006.01); C30B 35/00 (2006.01); C30B 11/00 (2006.01); C30B 29/18 (2006.01); C30B 29/06 (2006.01); C03B 19/09 (2006.01);
U.S. Cl.
CPC ...
C30B 15/10 (2013.01); C03B 19/095 (2013.01); C30B 11/002 (2013.01); C30B 29/06 (2013.01); C30B 29/18 (2013.01); C30B 35/002 (2013.01); Y02P 40/57 (2015.11); Y10T 117/1032 (2015.01);
Abstract

The present invention is directed to a single-crystal silicon pulling silica container, the silica container including a straight body portion, a curved portion, and a bottom portion, wherein the OH group concentration in the straight body portion is 30 to 300 ppm by mass, the OH group concentration in the bottom portion is 30 ppm by mass or less, and the difference in the OH group concentration between the straight body portion and the bottom portion is 30 ppm by mass or more. As a result, a low-cost single-crystal silicon pulling silica container, the silica container that can reduce cavity defects called voids and pinholes in pulled single crystal silicon, is provided.


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